| PART |
Description |
Maker |
| 2SD1630 2SD1630L |
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁| 1A条一（c）|26
NPN SILICON DARLINGTON POWER TRANSISTOR
|
NEC
|
| ZTX614 |
NPN Darlington Transistor
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| 2N6387 2N6388 ON0090 |
DARLINGTON NPN SILICON POWER TRANSISTORS
8 AND 10 AMPERE NPN SILICON
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system
4.0 AMPERE POWER TRANSISTORS
Plastic Medium-Power Silicon NPN Darlingtons
DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
Motorola, Inc.
|
| PU3124 PU4124 PU4424 |
V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE, POWER AMPLIFIER, SWITCHING
|
Panasonic Semiconductor
|
| 2SB1492 2SD2254 2SB1490 2SD2250 |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
Silicon PNP epitaxial planar type Darlington(For power amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
SILICON NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| BU323ZG BU323Z09 |
NPN Silicon Power Darlington
|
ON Semiconductor
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
