| PART |
Description |
Maker |
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS41LV85125B-60K IS41LV85125B-60KL IS41LV85125B |
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| MSM51V16160F |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| MSM51V17100 |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| TC514410AP-80 TC514410ASJ-10 |
1M X 4 FAST PAGE DRAM, 80 ns, PDIP20
1M X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式（3.3伏，4米4带扩展数据输出页模式动态随机存储器（刷k）的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
| MT4LC2M8B2DL-6TR MT4LC2M8B2DJ-6 |
2M X 8 FAST PAGE DRAM, 60 ns, PDSO32
2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
|
| KM416C1200CT-L5 KM416V1200CT-L5 KM416C1000CJ-L5 |
1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
|
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