| PART |
Description |
Maker |
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| 2SC4242 |
POWER TRANSISTOR(7A,400V,40W)
|
MOSPEC[Mospec Semiconductor]
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| ASI10592 HF10-12F |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CIL351 CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE.
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE.
NPN SILICON PLANAR TRANSISTORS
|
Continental Device India Limited
|
| 2SC4160 2SC4160M 2SC4160N |
NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-220
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
Sanyo
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
|
