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2N6072 - Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.

2N6072_8329495.PDF Datasheet

 
Part No. 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N6075
Description Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.

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Part: 2N6071A
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 Full text search : Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
 Product Description search : Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.


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