
	Part Number	Hot Search : 2N4123TA UFM303 H223K 162000 NCP5395G P0442T SIS902DN 15040296
	Product Description
	Full Text Search

2N6649E3 - BJT( BiPolar Junction Transistor) Darlington Transistors

2N6649E3_8971022.PDF Datasheet

Part No.

2N6649E3 2N6648E3

Description

BJT( BiPolar Junction Transistor)
Darlington Transistors

File Size

246.94K / 7 Page

Maker

Microsemi

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2N6609

Maker: MOT

Pack: TO-3

Stock: Reserved

Unit price for :

50: $4.86

100: $4.62

1000: $4.37

Email: oulindz@gmail.com

Contact us

Homepage

Download

[ 2N6649E3 2N6648E3 Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ 2N6649E3 2N6648E3 Datasheet PDF Downlaod from Datasheet.HK

]
[2N6649E3 2N6648E3 Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for 2N6649E3 ]

[ Price & Availability of 2N6649E3 by FindChips.com ]

Full text search : BJT( BiPolar Junction Transistor) Darlington Transistors

Related Part Number

PART	Description	Maker
JANSM2N3439 JANSM2N3439L	BJT( BiPolar Junction Transistor)	Microsemi
JANSF2N5153U3	BJT( BiPolar Junction Transistor)	Microsemi
2N1483E3 2N1485E3 2N1484E3	BJT( BiPolar Junction Transistor) PNP Transistor	Microsemi
2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N	PNP Transistor BJT( BiPolar Junction Transistor)	Microsemi
6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1	TRANSISTOR \| BJT POWER MODULE \| 3-PH BRIDGE \| DARLINGTON \| 600V V(BR)CEO \| 15A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR \| BJT POWER MODULE \| HALF BRIDGE \| DARLINGTON \| 1.4KV V(BR)CEO \| 100A I(C) TRANSISTOR \| BJT POWER MODULE \| DARLINGTON \| 1.4KV V(BR)CEO \| 200A I(C) 4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver Bipolar Transistor Modules	Fuji Electric Co., Ltd.
2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S	1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) BJT Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体	ROHM
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554	germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR	New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
P4KE350	284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications	MDE Semiconductor
ZXTC2062E6 ZXTC2062E6TA	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes
ZTX618	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes
ZXTP749F ZXTP749FTA	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes

Related keyword From Full Text Search System

2N6649E3 参数封装	2N6649E3 battery mcu	2N6649E3 Series	2N6649E3 Nation	2N6649E3 sfp configuration
2N6649E3 Vcc	2N6649E3 State	2N6649E3 System	2N6649E3 ac/dc eurocard	2N6649E3 Marin