| PART |
Description |
Maker |
| KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
| KM41C16000C |
16M x 1Bit CMOS Dynamic RAM
|
Samsung Semiconductor
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC41C16105S IC41LV16105S IC41C16105S-50K IC41C1610 |
DYNAMIC RAM, FPM DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
