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  256m Datasheet PDF File

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    EDS2532JEBH-75TT

Elpida Memory
Part No. EDS2532JEBH-75TT
OCR Text 256m bits SDRAM WTR (Wide Temperature Range) EDS2532JEBH-75TT (8M words x 32 bits) Specifications * Density: 256m bits * Organization 2M words x 32 bits x 4 banks * Package: 90-ball FBGA Lead-free (RoHS compliant) * Power supply: VDD, ...
Description 256m bits SDRAM WTR

File Size 789.92K  /  50 Page

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    K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text 256m GDDR SDRAM 256mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 1.0 March 2004 Samsung Electronics reserves the right to change pro...
Description 256mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144

File Size 295.12K  /  17 Page

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    K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20

Samsung semiconductor
Part No. K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20
OCR Text 256m GDDR3 SDRAM 256mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL (144 - Ball FBGA) Revision 1.7 January 2005 Samsung Electronics reserves the right to c...
Description 256mbit GDDR3 SDRAM

File Size 1,021.57K  /  49 Page

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    Samsung Electronics
Part No. K9F2G08U0A K9F2G08R0A
OCR Text ... FLASH MEMORY Document Title 256m x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. 1.8V part is added. 2. tRHW, tCSD parameter is defined. 3. 4G DDP LGA part is deleted. 4. Technical note i...
Description (K9F2G08UxA) Flash Memory

File Size 1,140.50K  /  49 Page

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    Nanya Technology
Part No. NT16TC72B4NB1NL-BE NT16TC72C4NB1NL NT16TC72C4NB1NL-BE NT16TC72C4NB3NL NT4GC72B4PB0NL-CG NT8GC72B4NB3NJ NT8GC72B4NB1NJ-CG NT8GC72B4NB3NJ-CG NT4GC72B8PB0NL-CG NT8GC72C4NB1NJ-CG NT2GC72B89B0NJ
OCR Text ...nl / nt16tc72c4nb 3 nl 2g b: 256m x 72 / 4gb: 512m x 72 / 8gb: 1 g x 72 / 16gb: 2g x 72 pc3 - 85 00 / pc3 - 10600 registered ddr 3 sdram dimm rev 1.2 1 12 /20 10 ? nanya technology corporation nanya reserves the ...
Description Registered DDR3 SDRAM DIMM

File Size 796.50K  /  40 Page

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    Hynix
Part No. H27U2G6F2C H27U2G8F2C
OCR Text ...0 1 1 h27(u_s)2g8_6f2c 2 gbit (256m x 8 bit) nand flash 2gb nand flash h27u2g8_6f2c h27s2g8_6f2c *da93e538-013c* b34416/177.179.157.84/2010-06-28 11:19 a pcpcwm_4828539:wp_0000001wp_0000001 apcpcw m_4828539:w p_0000001w p_0000001 rev 0.0...
Description 2Gb NAND FLASH

File Size 1,004.78K  /  63 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-FCB0 K9E2G08B0M-PIB0
OCR Text 256m x 8 Bits NAND Flash Memory Advanced FLASH MEMORY Revision History Revision No. History 0.0 0.1 Draft Date Nov. 8th 2004 Nov. 22th 2004 Remark Advanced Preliminary Initial issue. 1.Note1 of Program/Erase characterist...
Description 256m x 8 Bits NAND Flash Memory

File Size 893.70K  /  38 Page

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    K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M
OCR Text 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device...
Description FLASH MEMORY

File Size 597.88K  /  38 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YIB0 K9K2G08U0M-YIB0 K9K2G16Q0M-YIB0 K9K2G16U0M-YIB0 K9K2G08Q0M-PCB0 K9K2G08U0M-PCB0 K9K2G16Q0M-PCB0 K9K2G16U0M-PCB0 K9K2G16U0M-PIB0 K9K2G16U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G08U0M-PIB0 K9K2G16Q0M-PIB0 K9K2G08U0M-YCB0 K9K2G08Q0M-YCB0 K9K2G08Q0M-PIB0
OCR Text ...ASH MEMORY Document Title 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA D...
Description 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory 256m × 8 128M的16位NAND闪存

File Size 742.51K  /  38 Page

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Part No. K4D553235F-GC220
OCR Text 256m gddr sdram k4d553235f-gc - 1 - rev 1.1 (dec. 2004) 256mbit gddr sdram revision 1.1 december 2004 2m x 32bit x 4 banks graphic double data rate samsung electronics reserves the right to change products or specification without not...
Description 8M X 32 DDR DRAM, 0.45 ns, PBGA144

File Size 316.09K  /  18 Page

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