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  256m Datasheet PDF File

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    EDS2732AABJ-75 EDS2732AABJ-75-E EDS2732AABJ-75L-E

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Elpida Memory
Part No. EDS2732AABJ-75 EDS2732AABJ-75-E EDS2732AABJ-75L-E
OCR Text 256m bits SDRAM EDS2732AABJ-75 (8M words x 32 bits) Specifications * Density: 256m bits * Organization 2M words x 32 bits x 4 banks * Package: 90-ball FBGA Lead-free (RoHS compliant) * Power supply: VDD, VDDQ = 3.3V 0.3V * Clock frequ...
Description 256m bits SDRAM

File Size 633.50K  /  48 Page

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    K9F1G08U0C-PCB0T00

Samsung semiconductor
Part No. K9F1G08U0C-PCB0T00
OCR Text ...2 m393b5670dz1-c(f7/f8/h9) 1gb (256m x4)*18 rohs 800/1066/1333 1 4gb 512mx72 m393b5173dz1-c(f7/f8) 1gb (128m x8)*36 rohs 800/1066 4 4gb 512mx72 m393b5170dz1-c(f7/f8/h9) 1gb (256m x4)*36 rohs 800/1066/1333 2 8gb 1gx72 m393b1g70dj1-c(f7/f8) 2...
Description Samsung Semiconductor, Inc. Product Selection Guide

File Size 927.99K  /  36 Page

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    K9F4G08U0D-SIB0000

Samsung semiconductor
Part No. K9F4G08U0D-SIB0000
OCR Text ...670fh0-c(f8/h9/k0*)(04/05) 1gb (256m x4) * 18 lead free & halogen free 1066/1333 1 now 4gb 1.5v 512mx72 m393b5173fh0-cf8(04/05) 1gb (128m x8) * 36 lead free & halogen free 1066/1333 4 now m393b5170fh0-c(f8/h9/k0*)(04/05) 1gb (256m x4) * 36 ...
Description Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage

File Size 746.06K  /  28 Page

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    EDS2732AABJ-6B

Elpida Memory
Part No. EDS2732AABJ-6B
OCR Text 256m bits SDRAM EDS2732AABJ-6B (8M words x 32 bits) Specifications * Density: 256m bits * Organization 2M words x 32 bits x 4 banks * Package: 90-ball FBGA Lead-free (RoHS compliant) * Power supply: VDD, VDDQ = 3.3V 0.3V * Clock frequ...
Description 256m bits SDRAM

File Size 633.47K  /  48 Page

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    ECS2516ADCN-A

Elpida Memory
Part No. ECS2516ADCN-A
OCR Text 256m bits SDRAM Bare Chip ECS2516ADCN-A (16M words x 16 bits) Specifications * Density: 256m bits * Organization 4M words x 16 bits x 4 banks * Package: Bare chip * Power supply: VDD, VDDQ = 3.3V 0.3V * Clock frequency: 133MHz (max.) *...
Description 256m bits SDRAM Bare Chip

File Size 692.33K  /  48 Page

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    HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V128300GR-7.5-A HYS72V64300GR-7.5-D HYS72V1283201GR-75-D HYS72V256321GR-7.5

Infineon Technologies AG
Infineon Technologies A...
Part No. HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V128300GR-7.5-A HYS72V64300GR-7.5-D HYS72V1283201GR-75-D HYS72V256321GR-7.5-A HYS72V32200GR-7.5-C2 HYS72V64300GR-7.5-C2 HYS72V128320GR-7.5-C2 HYS72V256321GR-7-A HYS72V32300GR-75-C2 HYS72V64300GR-75-C2 HYS72V32301GR-75-C2 HYS72V1283201GR-75-C2 HYS72V16301GR-75-C2 HYS72V128300GR-7-A HYS72V2563201GR-7-A HYS72V64300GR-7-D HYS72V16301GR-7.5-C2 HYS72V16300GR-7.5-C HYS72V32301GR-7-C2 HYS72V32300GR-75-D HYS72V2563201GR-75-A
OCR Text ...32m x 72, 64m 72, 128m 72 and 256m x 72 high speed memory arrays designed with synchronous drams (sdrams) for ecc applications. all control and address signals are registered on-dimm and the design incorporates a pll circuit for the clock...
Description 1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256mB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168

File Size 403.58K  /  22 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S40AKT-7 M2V56S40AKT-6 M2V56S20AKT-7 M2V56S20AKT-6 M2V56S20AKT-5 M2V56S20AKT M2V56S30AKT-5 M2V56S40AKT-5
OCR Text 256m Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, M2V56S30AKT is a 4-bank x 8388608-word x 8-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit...
Description 256m Synchronous DRAM

File Size 615.84K  /  49 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S40ATP-7 M2V56S40ATP-6 M2V56S40ATP-5 M2V56S20ATP-7 M2V56S20ATP-6 M2V56S20ATP M2V56S30ATP-5 M2V56S30ATP-6
OCR Text 256m Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit...
Description 256m Synchronous DRAM

File Size 614.85K  /  49 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20
OCR Text 256m Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, s...
Description 256m Synchronous DRAM
From old datasheet system

File Size 238.59K  /  49 Page

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    HYS64T256020HU

Qimonda AG
Part No. HYS64T256020HU
OCR Text ...PC2-DDR2 SDRAM memory modules * 256m x 64 non-ECC and 256m x 72 ECC module organization, and 128M x 8 chip organization * 2GByte modules built with 1-Gbit DDR2 SDRAMs in PTFBGA-68 chipsize packages * All Speed grades faster than DDR2-400 co...
Description 240-Pin Unbuffered DDR2 SDRAM Modules

File Size 1,398.73K  /  61 Page

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