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  256m Datasheet PDF File

For 256m Found Datasheets File :: 1065    Search Time::3.328ms    
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    Elpida Memory, Inc.
Part No. EDS2732AABH-6B EDS2732AABH-6B-E EDS2732AABH-6BL-E
OCR Text 256m bits SDRAM EDS2732AABH-6B (8M words x 32 bits) Description The EDS2732AABH is a 256m bits SDRAM organized as 2,097,152 words x 32 bits x 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is pac...
Description GT 19C 19#12 SKT PLUG
GT 5C 4#4,1#8 SKT PLUG
GT 2C 2#0 SKT PLUG 256m位的SDRAM00万字× 32位)

File Size 692.59K  /  48 Page

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    Elpida Memory, Inc.
Part No. EDS2532AABH-6B-E EDS2532AABH-6BL-E
OCR Text 256m bits SDRAM EDS2532AABH-6B (8M words x 32 bits) Description The EDS2532AABH is a 256m bits SDRAM organized as 2,097,152 words x 32 bits x 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is pac...
Description GT 19C 19#12 PIN PLUG
GT 5C 4#4,1#8 PIN PLUG
GT 2C 2#0 PIN PLUG 256m位的SDRAM00万字× 32位)

File Size 692.19K  /  48 Page

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    HYS72T256023 HYS72T512022HR-3.7-A

Qimonda AG
Part No. HYS72T256023 HYS72T512022HR-3.7-A
OCR Text ... memory applications * Two rank 256m x 72, 512M x 72 module organization and 2 x 128M x 8, 2 x 256m x 4 chip organization * 2GByte, 4 GByte module built with stacked 1-Gbit DDR2 SDRAMs in P-TFBGA-71 chipsize packages * Standard DDR2 Synchro...
Description 240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240

File Size 1,059.74K  /  41 Page

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    VG37648041AT

VML[Vanguard International Semiconductor]
Part No. VG37648041AT
OCR Text 256m:x4, x8, x16 CMOS Synchronous Dynamic RAM The 256mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256mb DDR SDRAM uses a double-data-rat...
Description 256m:x4, x8, x16 CMOS Synchronous Dynamic RAM

File Size 963.00K  /  86 Page

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    Integrated Silicon Solu...
Part No. IS43R16800CC-6TL IS43R16800CC-5TLI
OCR Text ... sdram (rev.1.1) a3s56d30/40etp 256m double data rate synchronous dram preliminary preliminary pin function clk, /clk input clock: clk and /clk are differential clock inputs. all address and control input signals are sampled on the crossin...
Description Commands entered on each positive CLK edge

File Size 665.08K  /  37 Page

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    Integrated Silicon Solu...
Part No. IS43R16160-6TL
OCR Text ... sdram (rev.1.1) a3s56d30/40etp 256m double data rate synchronous dram preliminary preliminary pin function clk, /clk input clock: clk and /clk are differential clock inputs. all address and control input signals are sampled on the crossin...
Description Auto refresh and Self refresh

File Size 1,013.95K  /  37 Page

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    K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text 256m GDDR SDRAM 256mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev 1.7 ...
Description 256mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 204.60K  /  16 Page

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    K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 20...
Description 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 637.45K  /  40 Page

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    K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text 256m x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID read command is don' cared. t The 5th Byte ID after 90h...
Description 512M x 8 Bit / 256m x 16 Bit NAND Flash Memory

File Size 597.69K  /  38 Page

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