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MUX08FP FEN30GP 21A15 008S089 0R030 DF20LC2U HEM102 MICONDUC
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  0.0042 Datasheet PDF File

For 0.0042 Found Datasheets File :: 3497    Search Time::1.313ms    
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    hitachi
Part No. 2SH20
OCR Text ... conditions V IC = 100 A, VGE = 0 VCE = 600 V, VGE = 0 VGE = 20 V, VCE = 0 -------------------------------------------------------------------------------------- ---------------------------------------------------------------------------...
Description Silicon N-Channel IGBT
From old datasheet system

File Size 38.15K  /  8 Page

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    Sanyo
Part No. 2SJ306
OCR Text ...ns unit:mm 2063A [2SJ306] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Volt...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 93.13K  /  4 Page

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    hitachi
Part No. 2SJ506
OCR Text ... * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, I D = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltag...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 63.25K  /  9 Page

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    hitachi
Part No. 2SK1305
OCR Text ...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * -------------------------------------------------------------------------------------- -----------...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 29.29K  /  3 Page

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    hitachi
Part No. 2SK1831
OCR Text ...ax -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 Unit V Test Conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- K1832 Gate to source breakdown voltage Gate...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 29.50K  /  3 Page

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    hitachi
Part No. 2SK1836
OCR Text ...ax -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- Drain to source K1836 V(BR)DSS ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 59.59K  /  7 Page

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    2SK1959 2SK1959-T1

NEC[NEC]
Part No. 2SK1959 2SK1959-T1
OCR Text ...PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 * Gate can be driven by 1.5 V * Low ON resistance RDS(on) = 3.2 MAX. RDS(on) = 0.5 MAX. @ VGS = 1.5 V, ID = 50 mA @ VGS = 4.0 V, ID = 1.0 A 0.8 MIN. FEATURES S 0.42 0.06 1.5 ...
Description N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

File Size 53.85K  /  6 Page

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    hitachi
Part No. 2SK2144
OCR Text ...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V * ID = 1 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 --------------------...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 24.45K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SK2211
OCR Text ...pe/magazine packing. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 4.0+0.25 -0.20 0.40.04 s Absolute Maximum Ratings Ta = 25C Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Al...
Description Silicon MOS FETs (Small Signal)

File Size 41.80K  /  3 Page

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    panasonic
Part No. 2SK2211
OCR Text ...ugh the tape/magazine packing. 0.40.08 1.50.1 3 4.0+0.25 -0.20 2.50.1 3 1.0+0.1 -0.2 1 3 2 0.50.08 0.40.04 I Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain...
Description Small-signal device - Small-signal FETs - MOS FETs
MiniP3-F1

File Size 64.36K  /  2 Page

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