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Vishay
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| Part No. |
2N5116 2N5115 70260
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| OCR Text |
...SS IGSS IG
IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 nA VGS = 0 V VDS = -18 V VDS = -15 V
45
30 5 -30 10 -90
30 3 -15 6 -60 500 1
30 1 -5 4 -25 500 1
V
mA pA mA
VGS = 20 V, VDS = 0 V TA = 150_C VDG = -15 V, ID = -1 ... |
| Description |
P-Channel JFETs
From old datasheet system
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| File Size |
70.20K /
5 Page |
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SEMELAB
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| Part No. |
2N5157
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| OCR Text |
0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.... |
| Description |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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| File Size |
10.67K /
1 Page |
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ON Semi
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| Part No. |
2N6035 2N6039 2N6038 ON0073
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| OCR Text |
...in -- hFE = 2000 (Typ) @ IC = 2.0 Adc * Collector-Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6035, 2N6038 VCEO(sus) = 80 Vdc (Min) -- 2N6036, 2N6039 * Forward Biased Second Breakdown Current Capability IS/b = 1.5... |
| Description |
60, 80 VOLTS 40 WATTS
From old datasheet system
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| File Size |
243.44K /
6 Page |
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Matsshita / Panasonic
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| Part No. |
2SA0886 2SA08862SA886 2SA0886R
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| OCR Text |
...tallation to the heat sink
8.0+0.5 -0.1 3.160.1
3.80.3 11.00.5
3.20.2
1.90.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current ... |
| Description |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Power Transistors
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| File Size |
62.95K /
4 Page |
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hitachi
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| Part No. |
2SA10252SA10812SA1082 2SA1025
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| OCR Text |
...EBO
1
2SA1081 Max -- -- -- -0.1 -0.1 800 -0.2 Min -90 -90 -5 -- -- 250 -- -- -- -- Typ Max -- -- -- -- -- -- -- -- -- -- -0.1 -0.1 800 -0.2
2SA1082 Min Typ Max -- -- -- -0.1 -0.1 800 -0.2 V V Unit Test conditions V V A A IC = -10 A, ... |
| Description |
Silicon PNP Epitaxial
From old datasheet system
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| File Size |
18.78K /
4 Page |
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hitachi
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| Part No. |
2SA11902SA1191 2SA1190
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| OCR Text |
...FE*
1
2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C = -2 mA*2 I C... |
| Description |
Silicon PNP Epitaxial
From old datasheet system
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| File Size |
62.74K /
8 Page |
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Sanyo
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| Part No. |
2SA1207
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| OCR Text |
...:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-... |
| Description |
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
44.02K /
4 Page |
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Matsshita / Panasonic
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| Part No. |
2SA1310
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| OCR Text |
...C3312
Unit: mm
4.00.2
3.00.2 0.70.1
s Features
q q q q
Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25C)
Ratings -60 -55 -7 -200 -100... |
| Description |
Transistor
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| File Size |
46.11K /
3 Page |
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Price and Availability
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