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Integrated Silicon Solu...
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| Part No. |
IS46LR32400F
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| OCR Text |
...synchronous dram organized as 4 banks of 1,048,576 words x 32 bits. this product uses a double - data - rate architecture to achieve high - speed operation . the data input/ output signals are transmitted on a 32 - bit bus. the doubl... |
| Description |
1M x 32Bits x 4banks Mobile DDR SDRAM
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| File Size |
946.31K /
42 Page |
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Integrated Silicon Solu...
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| Part No. |
IS46LR32200B
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| OCR Text |
...synchronous dram organized as 4 banks of 524,288 words x 32 bits. this product uses a double - data - rate architecture to achieve high - speed operation . the data input / output signals are transmitted on a 32 - bit bus . the dou... |
| Description |
512K x 32Bits x 4banks Mobile DDR SDRAM
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| File Size |
1,175.66K /
42 Page |
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Integrated Silicon Solu...
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| Part No. |
IS46LR32160C
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| OCR Text |
...synchronous dram organized as 4 banks of 4,194,304 words x 32 bits. this product uses a double - data - rate architecture to achieve high - speed operation . the data input/ output signals are transmitted on a 32 - bit bus. the double ... |
| Description |
4M x 32Bits x 4banks Mobile DDR SDRAM
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| File Size |
1,339.73K /
47 Page |
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
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| OCR Text |
banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V64162... |
| Description |
SDRAM - 64Mb
4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
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| File Size |
142.41K /
12 Page |
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Price and Availability
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